Interface state generation by alternating voltage stress under visible irradiation at the silicon-silicon dioxide interface

Abstract

The generation of interface states in SiO2 metal-oxide-semiconductor capacitors was observed when the structure was stressed simultaneously by a visible radiation and alternating voltage of relatively large amplitude. A correlation between the number of newly generated interface states and the amplitude of the cycling voltage has been found. Part of the surface states generated by a relatively low ac cycling amplitude were relaxable with time. The cause of the generation of interface states at the silicon-silicondioxide (Si-SiO2) interface has been associated with the hot electrons and holes injected into SiO2 by the comparatively large amplitude of the alternating voltage.