Abstract
This study proposes and demonstrates a silicon-oxide-nitride-oxide-silicon (SONOS)-type memory device based on a high-k dielectric praseodymium oxide (Pr2O3) trapping layer. In the proposed design, channel hot electron injection programming and band-to-band hot-hole injection erasing allow highly efficient two-bit and four-level device operation. The proposed design also has a total memory window of 5 V, a ten-year Vt retention window larger than 0.8 V between adjacent levels, and enough memory window for 105 programming/erasing cycles of endurance. The proposed SONOS-type Pr2O3 trapping layer flash memory exhibits large memory windows, high program/erase speed, good endurance, and good disturbance characteristics.
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