Two-bit ferroelectric field-effect transistor memories assembled on individual nanotubes

Abstract

Carbon nanotube (CNT) ferroelectric field-effect transistors (FeFETs) with well-definedmemory switch behaviors are promising for nonvolatile, nondestructive read-out (NDRO)memory operation and ultralow power consumption. Here, we report two-bit CNT-FeFETmemories by assembling two top gates on individual nanotubes coated with ferroelectric thinfilms. Each bit of the nanotube transistor memory exhibits a controllable memory switchingbehavior induced by the reversible remnant polarization of the ferroelectric films, and itsNDRO operation is demonstrated. The low driving voltage of 2 V, high carrier mobility over1000 cm2 V−1 s−1, and potential ultrahigh integration density over200 Gbit inch−2 of the two-bit FeFET memory are highlighted in this paper.