Abstract
Although silicon is an indirect bandgap material, light emission from reverse biased pn junctions has been observed. Although the quantum efficiency is low, it will be very advantageous to utilise these devices in all-silicon optoelectronic integrated circuits (OIC's). In this paper a review of our large area display and fibre-optic devices is given, followed by new research results achieved at CEFIM with regard to low voltage two-terminal line source Si LED's. A discussion of the differences observed between avalanche and field emission LED performance is presented. The detail spectral characteristics of field emission devices, and the spectral modulation of the optical signal from field emission light emitting devices are investigated. The design and simulation of a CMOS two-colour detector is presented, to be used as a detector for spectrally modulated optical signals. Gate-controlled diode MOS-like and carrier injection BJT-like multi-terminal devices are reviewed, and it is particularly indicated that both spatial modulation of the light emitting pattern and light intensity modulation can be achieved with these devices. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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