Abstract
The dynamics of charge carriers and the electric field in reverse biased pn junction in the presence of injected current is studied within the frame of a drift-diffusion model of semiconductors accounting for impact ionization. It is shown that for asymmetrical pn junctions and strong enough injected current, the charges of electrons and holes generated due to impact ionization make noticeable distortions in the electric field and dimensions of the depleted area which leads to time modulation of the currents flowing through the junction and voltage dropping across it. Self-oscillatory regime occurs when the reverse voltage approaches the critical value of the avalanche breakdown. This effect may be used for generation of electromagnetic oscillations in millimeter and submillimeter wave bands.
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