Abstract
An organic vapor sensitive device using anodized porous silicon has been developed. The device consists of two pn junctions surrounded by the porous silicon layer as a vapor sensing element. The devices show an increase of current for exposure to thousands ppm of organic vapor at room temperature. A high sensitivity is observed for ethanol vapor. The porous silicon combined with the reverse biased pn junction plays an important role for vapor sensing. It is discussed that the adsorption of polar molecules in the vicinity of pn junction induces a ‘soft’ breakdown in the reverse biased pn junction.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
