Abstract
The purpose of this paper is to present the electro-optical performances of dual-band infrared detectors operating in a fully spatially coherent mode, with a small pixel pitch. The successive steps of device fabrication are first exposed, including molecular beam epitaxy (MBE), technological processing, and readout circuit design. It is shown that very high-quality multiple layer heterostructures of HgCdTe can be grown and processed into 256×256 arrays of 25-µm pitch mesas, each mesa including two photodiodes with different cutoff wavelengths ranging in the midwave infrared (MWIR). Characterization of these focal plane arrays (FPAs) shows very good homogeneity, low defect density, and operabilities usually above 99% for both response and noise equivalent thermal difference (NETD).
Published Version
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