Abstract
An analytical model used for analyzing the fast turnoff transient characteristics of the complementary insulated-gate bipolar transistor (CIGBT) is proposed, accounting for the transient charge-sharing effect and the back-injection effect. The normalized turnoff transient current of the CIGBT is obtained, which is in agreement with the enhanced SPICE3 simulated results and the experiment. The relationships of the turnoff time T/sub 0/ with the device parameters are given. The modeling methodology is also applicable to the mixed LIGBT/LDMOS.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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