Abstract
4H-SiC asymmetrical gate turn-off thyristors (GTOs) with 2.6 kV breakover voltage have been studied in relation to the gate turn-off performance. Transient characteristics of SiC GTOs and the pulse regime of gate turn-off processes were studied in the temperature range 293 to 500 K. At cathode current density of 300 A cm-2, a turn-off current gain KG of 12.5 was achieved at room temperature. The above value of KG is the highest reported for SiC GTOs. The temperature dependences of the turn-off time, pulse turn-off gate current and holding current were studied.
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