Abstract
In this research, the instability of n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS TFTs) is investigated under DC bias stress and a unique phenomenon is observed. At a large gate stressing voltage and simultaneous low to moderate drain biasing voltages operating in a linear region, a turn-around phenomenon is observed in the on-current (Ion) degradation trend of the TFT characteristics, resulting from the increase in maximum transconductance (Gm,max). However, under a larger drain stressing voltage, the turn-around phenomenon of the Ion degradation trend is observed to disappear owing to the extensive increases in threshold voltage (Vth) and trap state density (Ntrap) in a channel, which cause the TFTs to deteriorate monotonically.
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