Abstract
AbstractHole tunnelling between light and heavy mass bands in a homogeneous semiconductor due to strong electric fields is analyzed in the framework of the spherical and degenerate at k = 0 bands with spin‐orbit interaction neglected. It is found that in k‐space intense transitions between bands occur in a ring‐shaped volume, whose symmetry axis is parallel to the electric field. At high fields, of the order of 30 kV/cm, the average diameter of the ring, where hole tunnelling is most intense, becomes smaller than the diameter of the optical phonon sphere. As a result, before the collision with an optical phonon, the ballistically moving hole experiences velocity modulation. Some possible experimental situations which would allow to discriminate the hole tunnelling in the degenerate bands from the collision dominated processes, are discussed briefly.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.