Abstract
Analytical expressions for the mean-square noise voltage and noise measure of a Read-type avalanche diode in mixed mode operation are derived which reveal some new features of noise generation in MITATT (mixed tunnelling avalanche transit time) devices. These expressions have been used to explore the potential of InAs/InAs0.88 Sb0.12 for a low-noise MITATT diode. Our results indicate the lowest noise measure of 10.9dB from In As/In As0.88 Sb0.12 Read type MITATT with 32% tunnelling current as against the value of 19.26 dB from a similar Si diode structure.
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