Abstract
High frequency properties of 4H-SiC double drift region (DDR) Mixed Tunnelling Avalanche Transit Time (MITATT) diodes are studied through computer simulation method. It is interesting to observe that the efficiency of SiC (flat) DDR MITATT diode (16%) is more than 4 times that of Si (flat) DDR MITATT diode (3.59%). In addition, a power output of more than 15 times from the SiC MITATT diode compared to the Si MITATT diode is commendable. A reduced noise measure of 17.71 dB from a low-high-low (lo-hi-lo) structure compared to that of 21.5 dB from a flat structure of SiC is indicative of the favourable effect of tunnelling current on the MITATT diode performance.
Highlights
Silicon-based power devices are used in a wide variety of power electronics applications
For a comparative study of the results obtained we have considered a flat profile double drift region (DDR) diode based on Silicon
We found that SiC Mixed Tunnelling Avalanche Transit Time (MITATT) has much higher breakdown voltage as compared to silicon
Summary
Silicon-based power devices are used in a wide variety of power electronics applications. There is a continuous demand for higher current, higher voltage blocking capacity, higher operating temperature and improvement in terms of efficiency, size and weight. This has made us to realise the necessity of better material to replace the existing silicon technology. Silicon carbide is known to be an excellent semiconductor for high-temperature and high-speed electronics [1]-[5]. This material has very high microwave conductivity and is less susceptible to radiation effect [1]. Among all solid state devices, Mixed Tunnelling Avalanche Transit Time diode has recognised itself as a powerful microwave
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