Abstract
AbstractTunneling transfer through Al0.35Ga0.65As barriers is studied in asymmetric double quantum well structures by time‐resolved photoluminescence measurements in the pico‐ and femtosecond regime. A large variety of electron and hole resonances is detected when electric fields of both signs are externally applied. The ground state resonance shifts, when the electrons tunnel in the reverse direction, revealing the importance of excitonic effects. Longitudinal optical phonon assisted tunneling plays a minor role for narrow quantum wells in comparison to impurity or interface roughness assisted transfer. Resonant electron tunneling times depend exponentially on the integrated square root of the tunneling barrier height and are an order of magnitude faster than resonant hole tunneling times. The n = 2 to n = 1 electronic intersubband scattering time in a 10 nm quantum well is determined to be 550 fs measuring the transfer time through a thin barrier.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
