Abstract
Transport properties of AlxGa1−xAs single barrier tunneling diodes with barrier compositions ranging from x=0.38 to x=1.00 are investigated. The pressure dependence of the tunneling current is used to monitor two distinct transport channels in these devices. The first channel is governed by the conduction-band offset between Γ-like states in the GaAs contacts and the AlxGa1−xAs barrier, which is independent of pressure. The barrier height for the second channel is determined by the X minima and not by the Γ minimum in the AlxGa1−xAs layer. Only this second conduction-band profile is pressure dependent. The crossover from the first to the second transport regime is observed directly in the sample with x=0.50.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
