Abstract
We investigate theoretically the resonant tunneling of electrons through a planar square array of GaAs spherical quantum dots buried in a Al xGa 1−xAs barrier between GaAs contacts. We show that the shape and width of the peak in the current density-voltage characteristic is a strong function of the quantum dot spacing and barrier height provided the dots are very closely spaced but that in general a characteristic typical of an isolated dot would be observed.
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