Abstract
It is now known that electron transport in narrow barrier superlattices proceeds by miniband conduction. However, previous experiments have been limited to studying electrons in the bottom of the first miniband. We report tunneling measurements which have enabled us to inject electrons into any position in the superlattice miniband structure. The MBE grown GaAs/(AlGa) As samples consist of an electron injector, an AlGaAs tunnel barrier and a superlattice. By biassing the structure we are able to control the electron injection energy, and the corresponding tunnel current shows pronounced negative differential resistance associated with the presence of minibands and band gaps. Analysis of the I–V characteristic shows that Bloch transport and not sequential Tunneling is occurring.
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