Abstract
Measurements of the variation of the low-temperature (LT) ultrasonic velocity and Raman scattering spectroscopy were performed on pure, bulk single-crystalline silicon, both unirradiated and irradiated with fast-neutron doses up to 1.7 and $3.2\ifmmode\times\else\texttimes\fi{}{10}^{21} {\mathrm{n}/\mathrm{c}\mathrm{m}}^{2} (E>0.1 \mathrm{MeV}).$ This irradiation is found to transform the crystalline silicon structure into a partly disordered state. Previous LT studies on amorphous and partly disordered low-coordinated solids show the presence of low-energy excitations, which can be described as quantum mechanical tunneling states (TS's). The possible ``glassy'' behavior of highly coordinated solids, is, however, still under discussion. Our observations indicate the presence of TS in neutron-irradiated bulk silicon. This result makes it possible to study TS in highly coordinated bulk solids.
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