Abstract
We demonstrate the room temperature polar switching and tunneling in PbZr0.52Ti0.48O3 (PZT) ultra-thin films of thickness 3–7 nm, sandwiched between platinum metal and ferromagnetic La0.67Sr0.33MnO3 (LSMO) layers, which also shows magnetic field dependent tunnel current switching in Pt/PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 heterostructures. The epitaxial nature, surface quality and ferroelectric switching of heterostructured films were examined with the help of x-ray diffraction patterns, atomic force microscopy, and piezo force microscopy, respectively. The capacitance versus voltage graphs show butterfly loops above the coercive field (> ±3 V) of PZT for small probe area (∼16 μm2). The effect of ferroelectric switching was observed in current density versus voltage curves with a large variation in high-resistance/low-resistance (HRS/LRS) ratio (2:1 to 100:1), however, these effects were more prominent in the presence of in-plane external magnetic field. The conductance is fitted with Brinkman’s model, and the parabolic conductance upon bias voltage implies electron tunneling governs the transport.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
