Abstract
Tunneling electroresistance (TER) effect was investigated in Pt/MgO/Pt/PbTiO3/Pt ferroelectric tunnel junctions (FTJs) theoretically. Compared to Pt/MgO/PbTiO3/Pt FTJs with the same composite barrier thickness (unit cells), FTJs with a thicker Pt interlayer (2 ∼ 3 unit cells) could provide 1 ∼ 6 orders of magnitude improvement in the TER ratio in a wide range of polarization. Resonant tunneling effect and/or enhanced asymmetry of the potential energy profile induced by the resonant-tunneling structure of MgO/Pt/PbTiO3 in Pt/MgO/Pt/PbTiO3/Pt FTJs is responsible for the TER improvement.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
