Abstract
Huge frequency dispersion appears in the capacitance-voltage (C-V) characteristic of metal-oxide-semiconductor capacitors (MOSCAPs) in depletion bias region especially when the oxide thickness is extremely small. The low frequency C-V curves have large capacitance value and behave as a peak at depletion bias. By using TCAD simulation, it was proven that the tunneling effect which is significant in thin oxide MOSCAPs plays an important role for the contribution of the frequency dispersion. The conventional theory of interface traps density is not the only cause of frequency dispersion. Consequently, extraction of interface traps density by the conventional high-low frequency method will introduce misleading error of interface property in ultra-thin oxide MOS devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
