Abstract
The current—voltage characteristics of indium phosphide tunnel and backward diodes were obtained and analyzed. The tunnel diodes with a negative resistance region were prepared by alloying pure tin, a mixture of tin and tellurium, or pure indium to zinc-doped InP. The backward diodes were prepared by alloying tin to cadmium-doped InP. The tunnel current density in InP diodes was found to be higher, at a given doping level, than in GaAs diodes.
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