Abstract
The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of high-power optical radiation. Basing on numerical simulation of the J–U characteristics of tunnel diodes, a method is proposed for increasing the peak tunneling-current density by including a thin undoped i-type layer with a thickness of several nanometers between degenerate layers of the tunnel diode. The p–i–n-GaAs/Al0.2Ga0.8As structures of the connecting tunnel diodes with a peak tunneling-current density of up to 200 A/cm2 are grown by molecular-beam epitaxy.
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