Abstract
The tunnel magnetoresistance (TMR) of ferromagnetic junctions including twisted magnetization near the insulator barrier has been theoretically studied using linear response theory and a single orbital tight-binding model. The region of the twisted magnetization has been found to have a large effect on TMR only when the twisted magnetization region is several atomic layers. This agrees with experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have