Tunnel magnetoresistance in planar junctions with ferromagnetic barriers

Abstract

Tunnel magnetoresistance (TMR) effect in double junctions with nonmagnetic electrodes and ferromagnetic barriers is analysed theoretically within the free-electron-like one-band model. The calculations are performed in the two limiting cases of electron tunnelling: sequential and coherent. The influence of height and thickness of the barriers and position of the Fermi level on the TMR effect is discussed. The bias voltage dependence of TMR is also analysed.