Abstract
The tunnel magnetoresistance (TMR) effect has been investigated for magnetic tunnel junctions with epitaxial Co2FeAl0.5Si0.5 Heusler electrodes with B2 and L21 structures on a Cr-bufferd MgO substrate. The epitaxially grown Co2FeAl0.5Si0.5 has B2 structure when annealed below 400°C, and has L21 structure for annealing above 450°C. The TMR ratio of 76% at room temperature and 106% at 5K were obtained for a MgO(001)∕Cr∕B2-type Co2FeAl0.5Si0.5∕Al oxide/Co75Fe25∕IrMn∕Ta. The TMR ratio is larger than that of magnetic tunnel junction with an L21-type electrode, which may be due to the smoother surface of the B2 structure and disordered L21 structure due to the Cr atom interdiffusion.
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