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Abstract
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become the basic component of novel memory, logic circuits, and other applications. Particularly since the first demonstration of current induced magnetization switching in MTJ, spin transfer torque magnetic random access memory (STT-MRAM) has sparked a huge interest thanks to its non-volatility, fast access speed, and infinite endurance. However, along with the advanced nodes scaling, MTJ with in-plane magnetic anisotropy suffers from modest thermal stability, high power consumption, and manufactural challenges. To address these concerns, focus of research has converted to the preferable perpendicular magnetic anisotropy (PMA) based MTJ, whereas a number of conditions still have to be met before its practical application. This paper overviews the principles of PMA and STT, where relevant issues are preliminarily discussed. Centering on the interfacial PMA in CoFeB/MgO system, we present the fundamentals and latest progress in the engineering, material, and structural points of view. The last part illustrates potential investigations and applications with regard to MTJ with interfacial PMA.
Highlights
Following Moore’s law, the development of semiconductor industry, especially the complementary metal oxide semiconductor (CMOS) technology, has deeply impacted the world since 1970s
In the rest of this review, we firstly introduce the fundamentals of perpendicular magnetic anisotropy (PMA) and spin transfer torque (STT) in the memory point of view, followed with the relevant description of fabrication and characterization methods
It is worth noting that the switching speed is determined by the amplitude of writing current rather than the orientation of magnetic moment, because the switching mode transits from being processional to thermal fluctuation assisted by STT along with extended pulse duration, further indicating the importance to pursue lower Ic0
Summary
Following Moore’s law, the development of semiconductor industry, especially the complementary metal oxide semiconductor (CMOS) technology, has deeply impacted the world since 1970s. The margin of two resistance states is defined as tunnel magnetoresistance ratio (TMR ratio): TTTTTT rrrrrrrrrr = Such characteristics allow the proposal and commercialization of magnetic random access memory (MRAM) by integrating the device onto the silicon based CMOS circuit, which demonstrates non-volatility, fast access speed, and infinite endurance. Having achieved giant TMR ratios up to 604% [7], in-plane magnetic anisotropy based MTJ still faces the obstacles from thermal stability and power consumption. The out-of-plane precession during spin transfer torque (STT) switching contributes to the power consumption. These disadvantages can be eliminated by introducing perpendicular magnetic anisotropy (PMA), MTJ with PMA is promising to enable high-density low-power VLSI.
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