Abstract
Feasibility of STT-MRAM (Spin-Transfer Torque Magnetic Random Access Memory) as next generation non-volatile memory has been tested for the replacement of DRAM and NOR Flash. For competition with DRAM, STT-MRAM unit cell size should be reduced to 6 ∼ 8F2 and switching current density is required to be less than 1 MA/cm2. Here, we report that the cell characteristics of on-axis STT-MRAM with 6 ∼ 8F2 are similar to those of off-axis STT-MRAM with 12 ∼ 16F2. In addition, we suggest a novel MTJ (Magnetic Tunnel Junction) with the operation current density of 0.8 MA/cm2. These results open a way to scale STT-MRAM down to sub- 30 nm technology node using present technology. By further material engineering of ferromagnetic electrode and MTJ structure design, the usage of present technology could be extended down to sub-20 nm node.
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