Abstract
A Tunnel FET (TFET), for which the device operation is based upon a band-to-band tunneling mechanism, is known to be very promising for low-power logic applications. A good output current saturation is necessary to make a device also attractive for mixed-signal system-on-chip applications. In this paper, the output current saturation mechanism for a TFET is reviewed. A comparison of different analog performance parameters between a double-gate (DG) n-channel TFET and a similar DG n-channel MOSFET is presented. It is shown that a TFET can produce higher gain at the same power level than a MOSFET. It is also shown that a complementary TFET amplifier can have more than one order of magnitude higher voltage gain than its MOS counterpart
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