Analog performance of double gate junctionless tunnel field effect transistor

Abstract

For the first time, we investigate the analog performance of n-type double gate junctionless tunnel field effect transistor (DG-JLTFET) and the results are compared with the conventional n-type double gate tunnel field effect transistor (DG-TFET) counterpart. Using extensive device simulations, the two devices are compared with the following analog performance parameters, namely transconductance, output conductance, output resistance, intrinsic gain, total gate capacitance and unity gain frequency. From the device simulation results, DG-JLTFET is found to have significantly better analog performance as compared to DG-TFET.