Abstract
We report the tunable magnetic properties and the smoothened surface morphology of epitaxial D022 Mn-Ga (Mn3Ga and Mn2.5Ga) films by N doping using reactive sputtering at 480 °C. The 50 nm thick Mn-Ga films grown with the N2/Ar gas flow rate (η) up to 0.66% showed 33%–50% reduction in the saturation magnetization compared to non-doped Mn-Ga. In particular, a single D022 phase was obtained in an optimal η range for Mn2.5Ga, resulted in the perpendicular magnetic anisotropy energy density of ∼1 MJ/m3 with 33% reduction in magnetization. Furthermore, the introduction of N provided the smoothened surface morphology at 50 nm thickness despite its high growth temperature, which is advantageous for thin film device applications.
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