Abstract

Dirac materials are characterized by energy-momentum relations that resemble those of relativistic massless particles. Commonly denominated Dirac cones, these dispersion relations are considered to be their essential feature. These materials comprise quite diverse examples, such as graphene and topological insulators. Band-engineering techniques should aim to a full control of the parameter that characterizes the Dirac cones: the Fermi velocity. We propose a general mechanism that enables the fine-tuning of the Fermi velocity in Dirac materials in a readily accessible way for experiments. By embedding the sample in a uniform electric field, the Fermi velocity is substantially modified. We first prove this result analytically, for the surface states of a topological insulator/semiconductor interface, and postulate its universality in other Dirac materials. Then we check its correctness in carbon-based Dirac materials, namely graphene nanoribbons and nanotubes, thus showing the validity of our hypothesis in different Dirac systems by means of continuum, tight-binding and ab-initio calculations.

Highlights

  • Dirac materials are characterized by energy-momentum relations that resemble those of relativistic massless particles

  • We have found that these surface states display a Dirac cone dispersion that widens as the field increases

  • Bearing in mind the universal properties of Dirac materials, we verify the generality of our results in other Dirac systems, such as graphene nanoribbons (GNRs) and carbon nanotubes (CNTs), and employing a different method, namely, the tight-binding (TB) approximation. We show that both TB and low-energy continuum (Dirac equation) calculations confirm the possibility to adjust the Fermi velocity in Dirac materials by lowering the slope of the Dirac dispersion relation

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Summary

Introduction

Dirac materials are characterized by energy-momentum relations that resemble those of relativistic massless particles. Denominated Dirac cones, these dispersion relations are considered to be their essential feature These materials comprise quite diverse examples, such as graphene and topological insulators. By embedding the sample in a uniform electric field, the Fermi velocity is substantially modified We first prove this result analytically, for the surface states of a topological insulator/semiconductor interface, and postulate its universality in other Dirac materials. From the standpoint of applications, Dirac materials are foreseen to be of paramount importance due to their universal behaviour and the robustness of their properties, linked to symmetry[3] Their band structure resembles the energy-momentum relation of relativistic massless particles where the energy dependence on the momentum is linear, the name of Dirac cones. An approximate solution is presented and an analytical expression displaying the renormalization of the Fermi velocity is obtained

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