Abstract
Tuning the emission profiles of various novel InxGa1−xAs nanostructures, such as quantum rods, quantum dot pairs (QDPs), bridged QDPs, dimpled quantum dots (QDs), and low-temperature-capped QDs, is demonstrated by postgrowth rapid thermal annealing. Specifically, improved optical properties, such as a much narrower full width at half maximum of 16 meV and a continuous blueshift, are demonstrated. The enhanced optical properties are attributed to the interchange of In and Ga atoms induced by both defect-assisted intermixing and strain-assisted intermixing. These results can find applications as an optical enhancement in nanostructures is critical for the improvements on device functionality.
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