Abstract
Post-growth rapid thermal annealing (RTA) has been used to investigate an interdiffusion and the structural change in an InGaAs dots-in-a-well (DWELL) structure grown by molecular beam epitaxy using an alternately supplying InAs and GaAs sources. In the case of the as-grown sample, which has a metastable quantum structure due to an intentional deficit of source materials, it is found that an InGaAs quantum well (QW) coexists with the premature quantum dots (QDs), and an intermediate layer exists between the QW and the QDs. Through the RTA process at 600 and 800°C for 30s, metastable structure changes into a normal DWELL structure composed of QDs and QW as a result of the intermixing of premature QDs and the intermediate layer.
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