Abstract
We investigated the effects of carrier dynamics on the temperature dependence of the photoluminescence (PL) of an InGaAs dots-in-a-well (DWELL) structure. The quantum dots (QDs) were formed by the atomic layer epitaxy (ALE) technique alternately supplying InAs and GaAs sources. It was found from the PL measurements at various temperatures that the DWELL structure was accomplished through the generation process of the intermediate layer between the quantum well (QW) and the QDs during the formation of the QDs inside a QW. The thermal quenching equations on the basis of the rate equation model can be explained by the carrier dynamics, which included in the radiative recombination, the carrier thermal escape and the carrier capture process occurring in these three layers, i.e. QW, QD and the intermediate layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
