Abstract
We present a study of the dynamic properties of electrons tunneling from an InGaAs quantum well to self assembled InAs quantum dots. The experiments were conducted on three highly asymmetric quantum dot infrared photodetectors, where the quantum well and quantum dots were separated by a composite GaAs/AlGaAs/GaAs barrier, which varied from 3.5 nm to 7.0 nm. We performed interband (photoluminescence) and intraband (photocurrent) measurements to characterize the spectral properties of the well and the dots. The photoluminescence measurements revealed that the two nanostructures are decoupled when the device is at zero bias. By intraband pump-probe experiments and photocurrent saturation experiments, we were able to extrapolate a refilling time τ from the well to the dots, which varied from a few μs for the thinnest barrier and hundreds of μs for the thickest one. The extracted values are in good agreement with characteristic tunneling times computed by using a model based on the theoretically predicted transmission coefficient of the electrons through the composite barrier.
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