Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization

Abstract

Self assembled InAs quantum dots (QDs) are grown by solid source molecular beam epitaxy on (100) and (111) Si substrates using Stranski–Krastanov (SK) growth mode. Reflection high energy diffraction (RHEED) streak patterns confirm that the combination of the atomic hydrogen followed by thermal desorption is an efficient cleaning method. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM). Different growth parameters such as InAs coverage, growth temperature, In-growth rate and V/III ratio are examined on differently prepared silicon surfaces including ex- and in-situ cleaning procedures. The ex-situ surface preparation consists of a pre-removal of the surface oxide by buffered HF (NH4/HF) treatment followed by an in-situ thermal atomic hydrogen (AH) assisted surface cleaning process at 500°C and a final thermal oxide desorption treatment in the growth chamber within a temperature range of 700–900°C. Additional improvement for the cleaning and growth is achieved by exposing the Si surface with Ga at low fluxes. The Ga treatment at a temperature of 560°C for 2min results in a strong reduction of the lateral size of InAs QDs from 50–70 down to 25–30nm and a significant enhancement in the homogeneity of the dot size and distribution. The InAs QDs density is strongly increased from 108 to 1011cm−2 at V/III ratio in the range of 15–35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures as high as 500°C. Moreover, InAs quantum dashes are observed on [111] orientation and at higher In-growth rate of 0.3ML/s.