Abstract
The simultaneous selenization/sulfurization is investigated to fabricate Cu(In, Ga)(Se,S)2 thin films in the H2S/H2Se/N2 hybrid gas, and the optical band gap of Cu(In, Ga)(Se,S)2 thin film is adjusted from 1.05eV to 1.22eV by varying the concentration ratio of H2S/H2Se. It is found that more S incorporates into the CIGSeS phase when the H2S concentration is increased, which widens the band gap of CIGSeS alloy. Furthermore, the through-film element profile of the CIGSeS films with different reaction time reveals that CIGSeS film is Ga-poor and S-poor during the initial reaction, and Ga and S are redistributed during the subsequent reaction with a joint of H2S and H2Se.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
