Abstract
High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CuInSe2 ternary compounds and subsequently Ga2Se3, In2Se3 and In2S3 binary compounds. The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the In2S3 /(Ga2Se3+ In2Se3) ratio.
Highlights
Photovoltaic power system has received considerable attention for safety and clean energy resources
We have proposed the process using a vacuum deposition apparatus with three evaporation boats which was the sequential evaporation technology from CuGaSe2 and CuInSe2 ternary compounds [7,8]
Cu(In,Ga)Se2 thin films were prepared by sequential evaporation process
Summary
Photovoltaic power system has received considerable attention for safety and clean energy resources. The band gap energy of Cu(In,Ga)Se2 thin films varies from about 1.0eV to 1.7eV according to the increase in CuGaSe2 molar fraction which makes it promising for single-junction and multi-junction solar cell applications [1]. The conversion efficiencies of Cu(In,Ga)Se2 thin film solar cells decreased with increasing a Ga/(In+Ga) mole ratio above 0.3 [4]. Our proposed process has advantages to be able to control a Ga/(In+Ga) mole ratio in Cu(In,Ga)Se2 thin films by changing the amount of CuGaSe2 and CuInSe2 evaporating materials in the first step and to use inexpensive equipment for preparation of an absorber layer. In2S3 was added as an evaporation material in the third step of our sequential evaporation process and the prepared thin films and solar cells were investigated
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