Tuning structural and electronic properties of Stanene-based nanotube by strain and transverse electric field: First-principles investigation

Abstract

In this work, we investigate the effects of applying strain and transverse electric field on the geometrical parameters and the electronic properties of (5,5) Stanene-based nanotube (SnNT) using density functional theory (DFT) calculations. The results reveal that the geometrical parameters such as diameter and buckling parameter affect by applying strain. Moreover, it is found that the studied nanotube exhibits direct and indirect band gap under tensile and compressive strain, respectively. In addition, the band gap energy decreases by increasing the compressive strain until the semiconductor to metal phase transition occurs. The external transverse electric field leads to separate degenerated states in the band structure and reduces the band gap energy of nanotube. Tuning the electric field induces semiconductor to metal transition. To further examine the electronic properties of (5,5) SnNT, the effective mass of charge carriers is calculated under applied strains and transverse electric fields.