Abstract
The current study presents the influence of Ti doping on the electronic, structural, and optical properties of Cu2O. The investigation employs a comparative approach, integrating theoretical calculations using density functional theory and experimental outcomes. Density of states spectra depicted the maximum contribution of Cu-d and O-p in the valence band, whereas Ti-d states filled the conduction band. Structural changes induced by Ti doping, including variations in peak intensity, crystallite size, and defects were examined in detail by X-ray diffraction analysis. The field emission scanning electron microscopy described grain morphology significantly changing upon Ti doping. Optical properties were scrutinized to determine variations in optical parameters. For both un-doped and Ti-doped Cu2O, the experimentally measured band gap was found to be decreased, ranging from 2.05 eV to 1.69 eV. The comparative studies enable a valuable understanding of the effectiveness of Ti doping in modifying the properties of Cu2O.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.