Abstract

Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled and indistinguishable photons.

Highlights

  • Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device

  • The underlying asymmetry of the self-assembled InAs/GaAs QDs leads to an energy splitting of the bright exciton states, known as fine-structure splitting (FSS), which is typically in tens of μeV,[4,5,6,7] and much larger than the radiative linewidth (∼1.0 μeV).[8]

  • We report on a uniaxial stress device as shown in Fig. 1 which is developed to work at low temperature

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Summary

Introduction

Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device.

Results
Conclusion

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