Tuning electrochemical catalytic activity of defective 2D terrace MoSe2 heterogeneous catalyst via cobalt doping

Xiaoshuang Chen,Pingan Hu,Feng Gao,Yunfeng Qiu,Wei Feng,Wenping Hu,Yongqing Fu,Guangbo Liu,Wenwu Cao,Wei Zheng

doi:10.1039/c7ta02327h

Abstract

Defective 2D terrace MoSe2/CoMoSe lateral and vertical heterostructures nanolayers electrocatalyst via metal cobalt doping displays ameliorative HER activity.

Highlights

Semiconductor heterostructures are the critical platform for many applications such as eld effect transistors (FET), photodetectors, solar cells, light-emitting diodes, hydrogen evolution reaction (HER), and lasers.[1,2,3,4,5,6] Traditional heterostructures are principally based on groups IV, II–VI, or III–V semiconductor materials by covalent bonds among atoms at the heterointerfaces.[7]
This study presents the successful growth of defective 2D terrace MoSe2/CoMoSe lateral heterostructures (LH), bilayer and multilayer MoSe2/CoMoSe LH, and vertical heterostructures (VH) nanolayers by doping metal cobalt (Co) element into MoSe2 atomic layers to form a CoMoSe alloy at high temperatures ($900 C)
After the successful introduction of metal Co heterogeneity in the MoSe2 thin layers, more active sites can be created to enhance hydrogen evolution reaction (HER) activities combining with metal Co catalysis through mechanisms such as (1) atomic arrangement distortion in CoMoSe alloy nanolayers, (2) atomic level coarsening in LH interfaces and terrace edge layer architecture in VH, and (3) formation of defective 2D terrace MoSe2 nanolayers heterogeneous catalyst via metal Co doping

Summary

Introduction

Semiconductor heterostructures are the critical platform for many applications such as eld effect transistors (FET), photodetectors, solar cells, light-emitting diodes, hydrogen evolution reaction (HER), and lasers.[1,2,3,4,5,6] Traditional heterostructures are principally based on groups IV, II–VI, or III–V semiconductor materials by covalent bonds among atoms at the heterointerfaces.[7]. This study presents the successful growth of defective 2D terrace MoSe2/CoMoSe lateral heterostructures (LH), bilayer and multilayer MoSe2/CoMoSe LH, and vertical heterostructures (VH) nanolayers by doping metal cobalt (Co) element into MoSe2 atomic layers to form a CoMoSe alloy at high temperatures ($900 C).

Results

Conclusion