Abstract
The large impedance mismatch between the highly resistive amorphous state and the highly conductive crystalline state of Ge2Sb2Te5 is an impediment for the realization of high-speed electrically switched optical devices. In this paper, we demonstrate that tungsten doping can reduce this resistivity contrast and also results in a lower amorphous state resistivity. Additionally, it lowers the contact resistance, improves the optical contrast, and extends the face-centered-cubic state up to 350 °C, with a minimal impact on thermal conductivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have