Abstract
AbstractHeterojunction PN diode and inverter circuits are fabricated and presented, combining two‐dimensional WSe2 nanoflake and amorphous InGaZnO (a‐IGZO) thin film on a glass substrate. A heterojunction p‐WSe2/n‐IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode‐load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n‐FET displays the capability of visible light detection when a reverse‐bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.
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