Abstract
Dodecylbenzenesulfonic acid doped poly (3, 4-etylenedioxythiophene)/SnO 2 nanocomposites were synthesized by the self-assembly method and irradiated with 90 MeV O7+ ions at the fluences of 5×1010, 1×1011, 5×1011 and 1×1012 ions/cm2 using the 15UD Pelletron accelerator under high vacuum. DC conductivity of unirradiated nanocomposites exhibits Mott's 1D variable range hopping (VRH) mechanism. However, there is cross-over to 3D VRH mechanism at higher irradiation fluence of 5×1011 and 1×1012 ions/cm2. There is an enhancement in the electrical conductivity of the nanocomposites upon swift heavy ion irradiation. Current–voltage (I–V) characteristics indicate the formation of Schottky barriers at the interfaces in the nanocomposites.
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