Tuneable resistive switching characteristics of In2O3 nanorods array via Co doping

Abstract

In this work, a novel approach to fabricate In2O3 nanorod arrays with tunable resistive switching characteristics via Co doping was addressed. The experimental results demonstrated that Co-doped In2O3 nanorod arrays exhibit excellent and stable resistive switching (RS) performances with a high/low resistance ratio of more than 100, endurance performance of more than 8000 cycles, and a data retention time of more than 4000 s. Moreover, the device also shows high uniformity and stability at high temperatures (∼475 K). The superior RS performance of the as-fabricated device could be explained on the basis of a conducting filaments based model.