Tunable wavelength light emission from longitudinally biased p-GaAs/n-Ga 1− xAl xAs junction containing GaAs quantum wells: non-linear dynamics

Abstract

We report on the operation and non-linear dynamics of a hot electron device that emits light with wavelength tunablity. The device consists of p-GaAs/n-Ga 1− x Al x As heterojunction containing an inversion layer on the p-side, and GaAs quantum wells on the n-side. It is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure – Type 2). The device utilises hot electron longitudinal transport and the light emission is independent of the polarity of applied voltage. The wavelength of the emitted light can be tuned with applied bias from 1.50 to 1.61 eV. The operation of the device requires only two diffused in point contacts. Theoretical modelling of the device operation has been carried out and compared with the experimental results.