Abstract
We demonstrate the operation of a surface emitting light emitting diode. The wavelength of the emitted light can be tuned with the applied voltage. The device is based on a p-GaAs and n-Ga1−xAlxAs heterojunction containing an inversion layer in the p side and, GaAs quantum wells in the n side, and, is referred to as HELLISH-II (hot electron light emitting and lasing in semiconductor heterojunction). The device utilizes hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage.
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