Abstract
Charged interface states are introduced by UV-ozone treatment of a polymer gate dielectric, parylene, prior to deposition of the organic semiconductor, pentacene, thereby modifying the organic field effect transistor (OFET) operation from enhancement to depletion mode. Quasistatic capacitance-voltage measurements and the corresponding current-voltage characteristics show that the threshold voltage VT and flatband voltage VFB can be shifted by over +50V, depending on the ozone exposure time. This work demonstrates that careful control of the semiconductor-insulator interface state densities is essential to VT and VFB control and the fabrication of reliable OFET integrated circuits.
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